WNM01N10
Single N-Channel, 100V, 1.7A, Power MOSFET
VDS (V) 100
Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V
D...
WNM01N10
Single N-Channel, 100V, 1.7A, Power MOSFET
VDS (V) 100
Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V
Descriptions
The WNM01N10 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N10 is Pb-free and Halogen-free.
WNM01N10
Http://www.sh-willsemi.com
D S
G SOT-23
D 3
12 GS Pin configuration (Top view)
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
NA = Device Code Y = Year W = Week
Marking
Order information
Device
Package
WNM01N10-3/TR SOT-23
Shipping 3000/Reel&Tape
Will Semiconductor Ltd.
1
2016/01/18 – Rev. 1.2
Absolute Maxim...