WNM3017

WNM3017 Single N-Channel, 30V, 6.2A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 17 @ VGS=10V Descriptions The WNM3017 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3017 is Pb-free. WNM3017 Http://www.sh-willsemi.com (6) (4) (5) (D) (S) (1) (2) (3) (1) (2) (3) DFN2x2-6L Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package DFN2x2-6L Applications  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Pin configuration (Top view) 3017 NM Y W = Device Code = Special Code = Year = Week(A~z) Marking Order information Device Package Shipping WNM3017-6/TR DFN2x2-6L 3000/Tape&Reel Will Semiconductor Ltd. 1 2016/03/07- Rev.1.1...