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BAS16M3T5G

ON Semiconductor

Switching Diode

BAS16M3T5G Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM...


ON Semiconductor

BAS16M3T5G

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Description
BAS16M3T5G Switching Diode Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C PD 260 mW 2.0 mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 490 °C/W Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) PD RqJA 580 mW 4.6 mW/°C 215 °C/W Junction and Storage Temper...




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