Document
NSB9435T1G, NSV9435T1G
High Current Bias Resistor Transistor
PNP Silicon
Features
Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain −
hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc
Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc
SOT−223 Surface Mount Packaging ESD Rating − Human Body Model: Class 1B
− Machine Model: Class B
AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating
Symbol Value
Unit
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏCollector−Emitter Voltage ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏCollector−Base Voltage ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏEmitter−Base Voltage Ï.