BAV70DXV6

Monolithic Dual Switching Diode Common Cathode BAV70DXV6, NSVBAV70DXV6 Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR 100 IF 200 IFM(surge) 500 Vdc mAdc mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD 357 mW (Note 1) 2.9 mW/°C (Note 1) Thermal Resistance, Junction-to-Ambient RqJA 350 °C/W (Note 1) Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD 500 mW (Note 1) 4.0 mW/°C (Note 1) Thermal Resistance, Junction-to-Ambient RqJA 250 °C/W (Note 1) Junction and Storage Temperature Range TJ, Tstg − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad DATA SHEET www.onsemi.com 6 CATHODE 5 ANODE 4 ANODE ANODE 1 2 ANODE 3 CATHODE BAV70DXV6T1 SOT−563 CASE 463A 1 MARKING DIAGRAM A4 M G G 1 A4 = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING ...