isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaini...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -45V(Min) ·Complement to Type BD905 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-45
VCEO
Collector-Emitter Voltage
-45
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-20
IB
Base Current
-5
PC
Collector Power Dissipation @ TC=25℃
90
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.38 ℃/W
BD906
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
BD906
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -10A; IB= -2.5A
VBE(on) Base-Emitter On Voltage
IC= -5A ; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -45V; IE= 0
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0...