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BD907 Dataheets PDF



Part Number BD907
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon NPN Power Transistor
Datasheet BD907 DatasheetBD907 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD908 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Ba.

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD908 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current 5 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.38 ℃/W BD907 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V ICBO Collector Cutoff Current VCB= 60V;IE= 0 ICEO Collector Cutoff Current VCE= 30V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 4V hFE-2 DC Current Gain IC= 5A ; VCE= 4V hFE-3 DC Current Gain IC= 10A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V; ftest= 1.0MHz BD907 MIN MAX UNIT 60 V 1.0 V 3.0 V 2.5 V 1.5 V 0.5 mA 1.0 mA 1.0 mA 40 250 15 150 5 3.0 MHz isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD907 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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