TIP125

TIP125/126/127 TIP125/126/127 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP125 : TIP126 : TIP127 VCBO -60 -80 -100 V V V Collector-Emitter Voltage : TIP125 : TIP126 : TIP127 VCEO -60 -80 -100 V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG -5 -5 -8 -120 2 65 150 -65~150 V A A ㎃ W W ℃ ℃ PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit TO-220 1. Base 2. Collector 3. Emitter 12 3 Electrical Characteristics Ta=25℃ unless otherwise noted CHARACTERIST...