FLASH MEMORY 64M (4M x 16) BIT
www.DataSheet4U.com FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20903-1E
FLASH MEMORY
CMOS
64 M (4M × 16) BIT
MirrorFlashTM
...
Description
www.DataSheet4U.com FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20903-1E
FLASH MEMORY
CMOS
64 M (4M × 16) BIT
MirrorFlashTM
MBM29PL65LM-90/10
s DESCRIPTION
MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase. Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed standby mode operation. MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type is 48-pin TSOP. Embedded Program AlgorithmTM, when executed with erase or program command sequences, automatically times the program pulse widths and verifies proper cell margin. MBM29PL65LM, because of its capability in electrical data erase and program through write command, enables to rewrite data within the internal system. It is a truly dependable device for vast application possibilities.
s PRODUCT LINE UP
Part No. VCC VCCQ Max ...
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