MBM29DL163TE-12

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -70/90/12 s FEATURES 0.23 µm Process Technology Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) MBM29DL16XTE/BE 70 — — — 90 12 70 90 120 70 90 120 30 35 50 s PACKAGES 48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) 48-pin plastic FBGA (FPT-48P-M19) Marking Side...