MBM29DL163TD-70

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90 s FEATURES 0.33 µm Process Technology Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL16XTD/MBM29DL16XBD 70 — — 90 70 90 70 90 30 35 s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-pin plastic TS...