32M (4M x 8/2M x 16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
0.33 µm Process Technology Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements
s PRODUCT LINE UP
(Continued)
Part No.
www.DataSheet4U.com
Ordering Part No.
VCC = 3.3 V
+0.3 V –0.3 V
VCC = 3.0 V
+0.6 V –0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MBM29DL32XTD/MBM29DL32XBD 80 — —
— 90 12 80 90 120 80 90 120 30 35 50
s PACKAGES
48-pin plastic TSOP (I)
Marking Side
48-pin plastic TSOP (I)
57-ball plastic FBGA
(FPT-48P-M19)
Marking Si...
Similar Datasheet