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Part Number MBM29DL324TD-80
Manufacturers Fujitsu
Logo Fujitsu
Description 32M (4M x 8/2M x 16) BIT Dual Operation
Datasheet MBM29DL324TD-80 DatasheetMBM29DL324TD-80 Datasheet (PDF)

  MBM29DL324TD-80   MBM29DL324TD-80
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. www.DataSheet4U.com Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) MBM29DL32XTD/MBM29DL32XBD 80 — — — 90 12 80 90 120 80 90 120 30 35 50 s PACKAGES 48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) 57-ball plastic FBGA (FPT-48P-M19) Marking Si.



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