MJE2955T

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification MJE2955T DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE = 20–70 @ IC = -4 Adc ·Collector–emitter saturation voltage - VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE -70 -60 -5 -10 -6 75 150 -55~150 UNIT V V V A A W VALUE 1.67 UNIT /W SavantIC Semiconducto...