MJE3055T

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE3055T DESCRIPTION ·With TO-220 package ·Complement to type MJE2955T ·DC current gain -hFE = 20–70 @ IC = 4 Adc ·Collector–emitter saturation voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE 70 60 5 10 6 75 150 -55~150 UNIT V V V A A W VALUE 1.67 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified ...