POWER TRANSISTORS. MJE15030 Datasheet


MJE15030 TRANSISTORS. Datasheet pdf. Equivalent


Part Number

MJE15030

Description

NPN PLASTIC POWER TRANSISTORS

Manufacture

CDIL

Total Page 3 Pages
Datasheet
Download MJE15030 Datasheet


MJE15030
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
MJE15028, MJE15030
MJE15029, MJE15031
MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS
MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS
High frequency Drivers in Audio Amplifiers
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN. MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 1A; IB = 0.1A
D.C. current gain
IC = 0.1 A; VCE = 2 V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
VCBO
VCEO
15028
15029
max. 120
max. 120
max.
max.
max.
15030
15031
150 V
150 V
8.0 A
50 W
150 °C
max.
0.5 V
min.
15028
15029
40
15030
15031
max. 120
max. 120
150 V
150 V
Continental Device India Limited
Data Sheet
Page 1 of 3

MJE15030
MJE15028, MJE15030
MJE15029, MJE15031
Emitter base voltage (open collector)
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to TC = 25°C
Derate above 25°C
Total power dissipation up to TA = 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 120V
IB = 0; VCE = 150V
IE = 0; VCB = 120V
IE = 0; VCB = 150V
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 10 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 1 A; IB = 0.1 A
Base emitter on voltage
IC = 1A; VCE = 2V
D.C. current gain
IC = 0.1 A; VCE = 2 V
IC = 2 A; VCE = 2 V
IC = 3 A; VCE = 2 V
IC = 4 A; VCE = 2 V
Transition frequency f = 10 MHz
IC = 500 mA; VCE = 10 V
VEBO
IC
IC
IB
Ptot
Ptot
Tj
Tstg
max.
max.
max.
max.
max.
max.
max.
max.
max.
5.0 V
8.0 A
16 A
2.0 A
50 W
0.4 W/°C
2.0 W
0.016
W/°C
150 ºC
–65 to +150 ºC
Rth j–c
Rth j–a
=
=
2.5 °C/W
62.5 °C/W
15028
15029
15030
15031
ICEO
ICEO
ICBO
ICBO
max. 0.1
max. –
max. 10
max. –
– mA
0.1 mA
– µA
10 µA
IEBO
max.
10 µA
VCEO(sus)* min. 120
VCBO
min. 120
VEBO
min.
150 V
150 V
5.0 V
VCEsat* max.
0.5 V
VBE(on)* max.
1.0 V
hFE* min.
hFE* min.
hFE* min.
hFE* min.
40
40
40
20
fT(1)
min.
30 MHz
* Pulse test: pulse width 300 µs; duty cycle 2%.
(1) fT = |hfe|• ftest
Continental Device India Limited
Data Sheet
Page 2 of 3


Features Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company TO-220 Plastic Package MJE 15028, MJE15030 MJE15029, MJE15031 MJE 15028, 15030 NPN PLASTIC POWER TRANSIST ORS MJE15029, 15031 PNP PLASTIC POWER T RANSISTORS High frequency Drivers in Au dio Amplifiers N LH BF C E 12 3 A OO K D G J M All diminsions in mm. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM MIN. MAX. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J 0.56 K 12.70 14 .73 L 2.80 4.07 M 2.03 2.92 N 31.24 O D EG 7 4 ABSOLUTE MAXIMUM RATINGS Coll ector-base voltage (open emitter) Colle ctor-emitter voltage (open base) Collec tor current Total power dissipation up to TC = 25°C Junction temperature Coll ector-emitter saturation voltage IC = 1 A; IB = 0.1A D.C. current gain IC = 0.1 A; VCE = 2 V VCBO VCEO IC Ptot Tj VCE sat hFE RATINGS (at TA=25°C unless ot herwise specified) Limiting values Collector-base voltage (ope.
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