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Power Transistor. TIP41C Datasheet

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Power Transistor. TIP41C Datasheet






TIP41C Transistor. Datasheet pdf. Equivalent




TIP41C Transistor. Datasheet pdf. Equivalent





Part

TIP41C

Description

NPN Silicon Epitaxial Power Transistor



Feature


TIP41/41A/41B/41C ® Pb Free Plating P roduct TIP41/TIP41A/TIP41B/TIP41C Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switc hing Applications * Complement to TIP42 /TIP42A/TIP42B/TIP42C 9.90±0.20 φ3. 60±0.20 4.50±0.20 1.30±0.20 6.50 0.20 15.70±0.20 2.80±0.20 9.19±0. 20 COLLECTOR 2 BASE 1 3 EMITTER 1. B ASE 2. COLLECTOR 3. EMITTER .
Manufacture

Thinki Semiconductor

Datasheet
Download TIP41C Datasheet


Thinki Semiconductor TIP41C

TIP41C; 3.02±0.20 13.08±0.20 1.27±0.20 1.5 2±0.20 2.40±0.20 1 23 TO-220C 2.54 typ 2.54typ Package Dimension 0.80±0. 20 0.50±0.20 Dimensions in Millimeter s MAXIMUM RATINGS (TA=25℃ unless oth erwise noted) Symbol Parameter TIP41 VCBO Collector-Base Voltage 40 VCE O Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage IC Collector Cur rent -Continuous PC Collec.


Thinki Semiconductor TIP41C

tor Power Dissipation TJ Junction Tempe rature Tstg Storage Temperature TIP41 A TIP41B 60 80 60 80 5 6 2 150 -55-150 TIP41C 100 100 Units V V V A W ℃ © 2006 Thinki Semiconductor Co.,Ltd . Page 1/2 http://www.thinkisemi.com/ TIP41 .


Thinki Semiconductor TIP41C

.

Part

TIP41C

Description

NPN Silicon Epitaxial Power Transistor



Feature


TIP41/41A/41B/41C ® Pb Free Plating P roduct TIP41/TIP41A/TIP41B/TIP41C Pb NPN Silicon Epitaxial Power Transistor FEATURES: * Medium Power Linear Switc hing Applications * Complement to TIP42 /TIP42A/TIP42B/TIP42C 9.90±0.20 φ3. 60±0.20 4.50±0.20 1.30±0.20 6.50 0.20 15.70±0.20 2.80±0.20 9.19±0. 20 COLLECTOR 2 BASE 1 3 EMITTER 1. B ASE 2. COLLECTOR 3. EMITTER .
Manufacture

Thinki Semiconductor

Datasheet
Download TIP41C Datasheet




 TIP41C
TIP41/41A/41B/41C
®
Pb Free Plating Product
TIP41/TIP41A/TIP41B/TIP41C
Pb
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching Applications
* Complement to TIP42/TIP42A/TIP42B/TIP42C
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
COLLECTOR
2
BASE
1
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
1.27±0.20
1.52±0.20
2.40±0.20
1 23
TO-220C
2.54typ
2.54typ
Package Dimension
0.80±0.20
0.50±0.20
Dimensions in Millimeters
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
TIP41
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature
TIP41A TIP41B
60 80
60 80
5
6
2
150
-55-150
TIP41C
100
100
Units
V
V
V
A
W
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/




 TIP41C
TIP41/41A/41B/41C
®
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
TIP41
TIP41A
TIP41B V(BR)CBO
TIP41C
TIP41
TIP41A
TIP41B V(BR)CEO
TIP41C
Test conditions
IC=1mA, IE=0
IC=30mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE= 1mA, I C=0
Collector cut-off current
TIP41
TIP41A
TIP41B
TIP41C
VCB=40V, IE=0
ICBO VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, I E =0
Collector cut-off current
Emitter cut-off current
DC current gain
TIP41/41A
TIP41B/41C
ICEO
IEBO
hFE(1)
hFE(2)
VCE=30V, IB=0
VCE=60V, IB=0
VEB=5V, IC=0
VCE=4V, IC=0.3A
VCE=4V, IC=3A
Collector-emitter saturation voltage
VCE (sat) IC=6A, IB =0.6A
Base-emitter voltage
Transition Frequency
VBE(on)
fT
VCE=4V, IC=6A
VCE=10V, IC=0.5A
f = 1MHz
MIN
40
60
80
100
40
60
80
100
5
30
15
3
MAX UNIT
V
V
V
0.4 mA
0.7 mA
1 mA
75
1.5 V
2V
MHz
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/







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