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Part Number MBM29F033C-12
Manufacturers Fujitsu
Logo Fujitsu
Description 32M (4M x 8) BIT FLASH MEMORY
Datasheet MBM29F033C-12 DatasheetMBM29F033C-12 Datasheet (PDF)

  MBM29F033C-12   MBM29F033C-12
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 32M (4M × 8) BIT DS05-20869-3E MBM29F033C-70/-90/-12 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 write/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Uniform sectors of 64K bytes each Any combination of sectors can be erased. Also supports full chip erase • Embedded EraseTM Algorithms Automatically preprograms and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically programs and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/BUSY output (RY/BY) Hardware method for detection of program .



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