FLASH MEMORY 4M 512K x 8 BIT
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
MBM29F040A - 70/-90/-12
DS05–20810–3E
s DISTINCTI...
Description
FUJITSU SEMICONDUCTOR DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
MBM29F040A - 70/-90/-12
DS05–20810–3E
s DISTINCTIVE CHARACTERISTICS
Single 5.0 V read, write and erase Minimizes system level power requirements
Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
Compatible with JEDEC-standard byte-wide pinouts 32-pin PLCC (Package suffix: PD) 32-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) Note: If there are special requirements not specified above (such as DIP package), please contact Fujitsu sales office.
Minimum 100,000 write/erase cycles High performance
70 ns maximum access time Sector erase architecture
8 equal size sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase. Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM Algorithms Automatically writes and verifies...
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