16M (2M x 8/1M x 16) BIT FLASH MEMORY
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20879-2E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29F16...
Description
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20879-2E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29F160TE/BE-55/-70/-90
s GENERAL DESCRIPTION
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are
written to the command register using standard microprocessor wri...
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