FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20851-4E
FLASH MEMORY
CMOS
4M (512K × 8/256K × 16) BIT
MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70/-90
s FEATURES
www.DataSheet4U.com
• Single 5.0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF)
• Minimum 100,000 write/erase cycles • High performance
55 ns maximum access time • Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and ve.