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Part Number MBM29F800TA-70
Manufacturers Fujitsu
Logo Fujitsu
Description 8M (1M x 8/512K x 16) BIT FLASH MEMORY
Datasheet MBM29F800TA-70 DatasheetMBM29F800TA-70 Datasheet (PDF)

  MBM29F800TA-70   MBM29F800TA-70
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FEATURES www.DataSheet4U.com • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and.



MBM29F800TA-55 MBM29F800TA-70 MBM29F800TA-90


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