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Part Number MBM29LV004TC-90
Manufacturers Fujitsu
Logo Fujitsu
Description 4M (512K x 8) BIT FLASH MEMORY
Datasheet MBM29LV004TC-90 DatasheetMBM29LV004TC-90 Datasheet (PDF)

  MBM29LV004TC-90   MBM29LV004TC-90
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT DS05-20864-3E MBM29LV004TC-70/-90/-12/MBM29LV004BC-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type) 40-pin SON (Package suffix: PNS) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes Any combination of sectors can be concurrently erased. Also supports full chip erase • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified addr.



MBM29LV004TC-70 MBM29LV004TC-90 MBM29LV004TC-12


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