MBM29LV008BA-90

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8M (1M × 8) BIT DS05-20858-4E MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12 s FEATURES Single 3.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as E2PROMs Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type) Minimum 100,000 program/erase cycles High performance 70 ns maximum access time Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture T = Top sector B = Bottom sector Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle B...