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Part Number MBM29LV016B-90
Manufacturers Fujitsu
Logo Fujitsu
Description 16M (2M x 8) BIT FLASH MEMORY
Datasheet MBM29LV016B-90 DatasheetMBM29LV016B-90 Datasheet (PDF)

  MBM29LV016B-90   MBM29LV016B-90
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20855-4E MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded programTM Algorithms Automatically programs and verifies data at specified address • Data Poll.



MBM29LV016B-80 MBM29LV016B-90 MBM29LV016B-12


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