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Part Number MBM29LV017-80
Manufacturers Fujitsu
Logo Fujitsu
Description 16M (2M x 8) BIT FLASH MEMORY
Datasheet MBM29LV017-80 DatasheetMBM29LV017-80 Datasheet (PDF)

  MBM29LV017-80   MBM29LV017-80
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20857-4E MBM29LV017-80/-90/-12 s FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture Uniform sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded programTM Algorithms Automatically programs and verifies data at specified address • Data Polling and Toggle Bit feature for detection o.



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