(PDF) 2N3903 Datasheet PDF | Motorola





2N3903 Datasheet PDF

Part Number 2N3903
Description GENERAL PURPOSE TRANSISTOR
Manufacture Motorola
Total Page 6 Pages
PDF Download Download 2N3903 Datasheet PDF

Features: Datasheet pdf MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2N3904* *Motorola P referred Device 2 BASE 1 EMITTER MAX IMUM RATINGS Rating Symbol Value Co llector – Emitter Voltage Collector Base Voltage Emitter – Base Voltag e Collector Current — Continuous Tota l Device Dissipation @ TA = 25°C Derat e above 25°C VCEO VCBO VEBO IC PD 40 60 6.0 200 625 5.0 Total Device Dissi pation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junc tion Temperature Range TJ, Tstg – 5 5 to +150 THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Thermal Re sistance, Junction to Ambient RqJA 20 0 Thermal Resistance, Junction to Case RqJC 83.3 ELECTRICAL CHARACTERISTIC S (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Col lector – Emitter Breakdown Voltage (2 ) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC .

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2N3903 datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2N3903
2N3904*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
60
6.0
200
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. Indicates Data in addition to JEDEC Requirements.
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
60 — Vdc
6.0 — Vdc
— 50 nAdc
— 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–3

2N3903 datasheet
2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
Symbol
hFE
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
Collector – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
Base – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
Fall Time
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
20
40
35
70
50
100
30
60
15
30
0.65
250
300
1.0
1.0
0.1
0.5
50
100
1.0
Max Unit
150
300
Vdc
0.2
0.3
Vdc
0.85
0.95
MHz
4.0 pF
8.0 pF
k
8.0
10
X 10– 4
5.0
8.0
200
400
40 mmhos
dB
6.0
5.0
35 ns
35 ns
175 ns
200
50 ns
2–4 Motorola Small–Signal Transistors, FETs and Diodes Device Data





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