NPN Transistor. 2N3903 Datasheet

2N3903 Transistor. Datasheet pdf. Equivalent

2N3903 Datasheet
Recommendation 2N3903 Datasheet
Part 2N3903
Description NPN Transistor
Feature 2N3903; MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2.
Manufacture Motorola
Datasheet
Download 2N3903 Datasheet




Motorola 2N3903
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
COLLECTOR
3
2N3903
2N3904*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
60
6.0
200
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. Indicates Data in addition to JEDEC Requirements.
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
40 — Vdc
60 — Vdc
6.0 — Vdc
— 50 nAdc
— 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–3



Motorola 2N3903
2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
Symbol
hFE
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
Collector – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
Base – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
Fall Time
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
20
40
35
70
50
100
30
60
15
30
0.65
250
300
1.0
1.0
0.1
0.5
50
100
1.0
Max Unit
150
300
Vdc
0.2
0.3
Vdc
0.85
0.95
MHz
4.0 pF
8.0 pF
k
8.0
10
X 10– 4
5.0
8.0
200
400
40 mmhos
dB
6.0
5.0
35 ns
35 ns
175 ns
200
50 ns
2–4 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Motorola 2N3903
DUTY CYCLE = 2%
300 ns
– 0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
CS < 4 pF*
0
– 9.1 V
+10.9 V
2N3903 2N3904
+3 V
275
10 k
1N916
CS < 4 pF*
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0
Cibo
3.0
2.0 Cobo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000
2000
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–5







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)