2N6519

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VCEO 250 300 350 VCBO 250 300 350 VEBO 6.0 5.0 Base Current Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IB IC PD 250 500 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter...