MRF573

MRF571 MRF572 MRF573 MRF571 ^mC CASE 317-01, STYLE 2 \^ MRF572 "\ CASE 303-01, STYLE 1 MRF573 CASE 358-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol MRF571 MRF572 MRF573 Unit Collector-Emitter Voltage v CEO 10 10 10 Vdc Collector-Base Voltage vCBO 20 20 20 Vdc Emitter-Base Voltage VEBO 3.0 3.0 3.0 Vdc —Collector Current Continuous ic 70 70 70 mAdc Total Device Dissipation @TC = 100°C<1) Derate above 100°C Storage Temperature PD T stg 0.5 5.0 -65 to + 150 0.75 7.5 -65 to + 200 0.75 7.5 -65 to + 200 Watts mW/°C °C (1) Case temperature measured on collector lead immediately adjacent to body of package. 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 0.1 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 1.0 mAdc, Ie = 0) Emitter-Base Breakdown Voltage (lg = 50 tiAdc, Ic = 0) Collector Cutoff Current (VC B = 8.0 Vdc,...