MRF580

MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base Voltage vCBO 36 36 Vdc Emitter-Base Voltage —Collector Current Continuous vEBO "C 2.5 200 2.5 Vdc 200 mAdc Total Device Dissipation @TC = 50°C(1) Derate above Tq = 50°C PD 2.5 2.5 Watts 25 25 mW/°C Operating and Storage Junction Temperature Range TJ. Tstg -65 to + 150 -65 to + 150 °C (1) Case temperature measured on collector lead immediately adjacent to body of package. CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON MRF581 CASE 317-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage OC = 1.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage dC = 1.0 mAdc, El = 0) Emitter-Base Breakdown Voltage (IE = 0.10 mAdc, \q = 0) Collector Cutoff Current (VC b = 15 Vdc, El = 0) Emitter Cutoff Current (VCe = 2.0...