MRF581 Datasheet - ASI





MRF581 Datasheet - NPN SILICON RF TRANSISTOR

MRF581  

Datasheet: MRF581 datasheet

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Description: MRF581 NPN SILICON RF TRANSISTOR DESCR IPTION: The MRF581 is Designed for High current low Power Amplifier Applicatio ns up to 1.0 GHz. PACKAGE STYLE Dim. A re in mm FEATURES: • Low Noise Figur e • Low Intermodulation Distortion High Gain • Omnigold™ Metalizatio n System MAXIMUM RATINGS IC 200 mA V CBO 36 V VCEO 18 V VEBO 2.5 V PDI SS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Le ads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYM BOL NONETEST CONDITIONS BVCBO IC = 1 .0 mA BVCEO IC = 1.0 mA BVEBO IE = 100 µA IEBO VEB = 2.0 V ICBO VCB = 15 V hFE VCE = 5.0 V IC = 50 mA MINI MUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 200 UNITS V


Manufacture Part Number Description

ASI

MRF581

NPN SILICON RF TRANSISTOR

Motorola

MRF581

HIGH FREQUENCY TRANSISTOR

Microsemi

MRF581

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

New Jersey Semiconductor

MRF581

Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X

Advanced Power Technology

MRF581

RF and Microwave Discrete Low Power Power Transistors

Motorola

MRF5811LT1

NPN Silicon High Frequency Transistor




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