MRF607
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Val...
MRF607
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
16
Vdc
Collector-Base Voltage
VCBO
36
Vdc
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tq = 75°C(1)
Derate above 75°C
VEBO
'C
PD
4.0 0.33 3.5
28
Vdc Adc
Watts mW/°C
Storage Temperature
T stg
- 65 to + 200
°C
(1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as class B or C RF amplifiers.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 25 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage dC = 25 mAdc, VBE = 0)
Emitter-Base Breakdown Voltage (IE = 0.5 mAdc, Iq = 0)
Collector Cutoff Current
(Vqe = 10 Vdc, Ib = 0)
ON CHARACTERISTICS
DC Current Gain dC = 50 mAdc, VC e = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Outpu...