MRF905
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
RF OSCILLATOR TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitt...
MRF905
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
RF OSCILLATOR
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Tq = 100°C Derate above 100°C
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol VCEO VCBO v EBO
"C
PD
Tstg
Value 20 35
3.5 150 2.5 40
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C
Symbol R ftJC
Max
25
Unit °C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 0.1 mAdc, El = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, cl = 0)
Collector Cutoff Current
(VC B = 20 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain dC = 100 mAdc, Vqe = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 100 mAdc, Vce = 10 Vdc, f = 200 MHz)
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