MRF914
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emi...
MRF914
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Peak
Total Device Dissipation (a Ta = 75°C Derate above 75°C
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol vCEO v CBO VEBO
"C
PD
Tstg
Symbol R ftJA
Value 12 20 3.0 40 200
1.6
-65 to +200
Max
625
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
°C
Unit °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 1-0 mAdc, Bl = 0)
Collector-Base Breakdown Voltage OC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage (lg = 0.1 mAdc, lc = 0)
Collector Cutoff Current (V C B = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain dC = 20 mAdc, Vce = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS Current-Gain —- Bandwidth Product
dC = 20 mAdc, VC E = 10 Vdc, f = 0.5 GHz)
C...