MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Peak
@To...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Peak
@Total Device Dissipation T/\ = 100°C
Derate above 100°C Junction Temperature Storage Temperature
Symbol VCEO VCBO vEBO
ic
pd
Tj T stq
Value
5.0 10 2.0 5.0 50 1.0
+ 150 -65 to +150
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
°c
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol R 0JA
Max
500
Unit °C/W
MRF931
CASE 317-01, STYLE 2 HIGH FREQUENCY
TRANSISTOR
NPN SILICON
^r
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 0.1 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (IC = 0.01 mAdc, l£ = 0)
Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 5.0 Vdc, l£ = 0)
ON CHARACTERISTICS
DC Current Gain c(l = 0.25 mAdc, Vce = 1-0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
E
Similar Datasheet
