MRF8004

MRF8004 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @TC = 25°C(1) Derate above 25°C vCEO VCBO v EBO 'C PD 30 60 3.0 1.0 5.0 28.6 Vdc Vdc Vdc Adc Watts mW/°C Storage Temperature T stg - 65 to + 200 °C (1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. CASE 79-02, STYLE 1 TO-39 (TO-205AD) RF AMPLIFIER TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage C(l = 50 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage (lC = 200 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, lc = 0) Collector Cutoff Current (VC b = 15 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain (lC = 400 mAdc, VC e = 2.0 Vdc) Symbol Min V(BR)CEO V(BR)CES v (BR)EBO !CBO 3...