2N6255
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current ...
2N6255
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Jq = 25°C
Derate above 25°C Storage Temperature
Symbol vCEO v CBO v EBO
ic
PD
Tstg
Value 18 36 4.0
1.0 5.0 28.5
-65 to +200
Unit Vdc Vdc Vdc
Adc Watts mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic
Symbol
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, Vbe = 0)
Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
Collector Cutoff Current
(Vce = 15 Vdc, V B e = 0, TC = 55°C)
ON CHARACTERISTICS
DC Current Gain dC = 250 mAdc, Vce = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance (Vcb = 12.5 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter A...