MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (5 T"a = 25°C Derate above 25°C
Storage Temperature
Symbol VCEO VCBO VEBO
ic
pd
Tstg
Value 15 30
3.0 50 200 1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/X
°C
2N6304 2N6305
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, In. = 0)
Collector-Base Breakdown Voltage (IC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 5.0 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain dC = 2.0 mAdc, Vqe = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(IC = 10 mAdc, VC E = 5.0 Vdc, f = 100 MHz)
2N6304 2N6305
Collector-Base Capacitance (VCB = 1 ° Vd(=. Ie = 0, f = 1.0 MHz)
Small Signal Cu...