2N6603
JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS (Ta = 25°C ...
2N6603
JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS (Ta = 25°C Free Air Temperature)
Rating
Symbol
Value
Collector-Emitter Voltage
vCEO
15
Collector-Base Voltage
VCBO
25
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tq = 125°C
Derate above 125°C
VEBO
'c
PD
3.0 30 400 5.33
Storage Temperature
Tstg
- 65 to + 200
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
Symbol
Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
v (BR)CEO v (BR)CBO v (BR)EBO
! CBO
15 25 3.0
— -
— — — —
— Vdc — Vdc — Vdc
50 nAdc
ON CHARACTERISTICS
DC Current Gain dC = 15 mAdc, Vce = 10 Vdc)
— —hFE 30
200
SMALL SIGNAL CHARACTER...
