BFR90
CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR
NPN SILICON
J<
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
C...
BFR90
CASE 317A-01, STYLE 2 HIGH FREQUENCY
TRANSISTOR
NPN SILICON
J<
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 60°C
Derate above 60°C Storage Temperature
Symbol v CEO VCBO v EBO
"C
PD
Tstq
Value 15 20 3.0 30 180
2.0
- 65 to + 1 50
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol R &JA
Max
500
Unit °C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage Oc = 1.0 mAdc, Bl = 0)
Collector-Base Breakdown Voltage C(l = 0.1 mAdc, El = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(VcB = 10 Vdc, lg = 0)
ON CHARACTERISTICS
DC Current Gain dC = 14 mAdc, VCe = 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(lC = 14 mAdc, Vce = 10 Vdc, f = 0.5 GHz)
Collector-Ba...