Document
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Ta = 60°C Derate above 60°C
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol vCEO VCBO v EBO
ic
PD
TstQ
Symbol R 0JA
Value 12 15 3.0 35 180 2.0
-65 to +150
Max
500
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
"C
Unit °C/W
BFR91
CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR
NPN SILICON
j*C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC - 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 0.1 mAdc, l£ = 0)
Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0)
Collector Cutoff Current
(VCB = 5.0. Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain dC = 30 mAdc, Vce = 5.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 30 mAdc, VC e = 5.0 Vdc, f = 0.5 GHz)
Collector-B.