MRF402
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current ...
MRF402
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T& = 25°C
Derate above 25°C
Storage Temperature
Symbol VCEO VCBO v EBO
"C
PD
Tstg
Value 18 36 4.0 0.5
1.0 5.62
-65 to +200
Unit Vdc Vdc Vdc Adc Watts
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ff
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 100 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage dC = 100 mAdc, Vbe = 0)
Emitter-Base Breakdown Voltage (lg = 0.25 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain dC = 250 mAdc, Vce = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (Vcb = is vdc, ie = o, f = i.o mhz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter Amplifier Power Gain (Vcc = 12-5 Vdc, Pout = 1.0 W, lc(max) = 160 mAdc, f = 50 ...
