MPF1010

) MPF1010 CASE 29-03, STYLE 22 TO-92 (TO-226AE) TMOS SWITCHING N-CHANNEL - ENHANCEMENT MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous(1 Pulsed(2) @TaTotal Device Dissipation = 25°C Derate above 25°C VDSS vgs id 'DM pd 100 ±30 500 1000 1 8 Vdc Vdc mAdc Watts mW/°C Operating and Storage Temperature Range Tj, T stq -55 to +150 °C Thermal Resistance Junction to Ambient 6UA 125 °C/W (1)The Power Dissipation of the package may result in a lower continuous drain current. (2) Pulse Width < 300 us. Duty Cycle ^ 2%. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted ) Characteristic Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Vgs = o, di = 100 uA) Zero Gate Voltage Drain Current (v D s = 60 v, vqs = o> Gate-Body Leakage Current (Vqs = 10 vdc, v D s = oj ON CHARACTERISTICS* V(BR)DSS IDSS IGSS Gate Threshold Voltage (ID = 15 mA, VdS = VGS) Drain-Source On-Voltage (ID = 120 mA...