2N3866 TRANSISTOR Datasheet

2N3866 Datasheet, PDF, Equivalent


Part Number

2N3866

Description

HIGH FREQUENCY TRANSISTOR

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download 2N3866 Datasheet


2N3866
2N3866
2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation Ca Jq = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
VEBO
'c
PD
T stg
Value
30
55
3.5
0.4
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 5.0 mAdc, Rbe = 10 n)
Collector-Emitter Sustaining Voltage
dC = 5.0 mAdc, Bl = 0)
Emitter-Base Breakdown Voltage
(IE = 100 MAdc, lc = 0)
Collector Cutoff Current
(VC E = 28 Vdc, Bl = 0)
Collector Cutoff Current
(Vce = 30 Vdc, Vbe = -1.5 Vdc (Rev.), Jq = 200°C)
(Vce = 55 Vdc, V B e = -1.5 Vdc (Rev.)
Emitter Cutoff Current
(V B e = 3.5 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 360 mAdc, Vce = 5.0 Vdc)
dC = 50 mAdc, Vce = 5.0 Vdc)
Both
2N3866
2N3866A
Collector-Emitter Saturation Voltage
Oc = 100 mAdc, Ib = 20 mAdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 50 mAdc, Vce = 15 Vdc, f = 200 MHz)
2N3866
2N3866A
Output Capacitance
(VC B = 28 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Amplifier Power Gain
(VCc = 28 Vd c. Pout = 10 W, f = 400 MHz)
Collector Efficiency
(Vce = 28 Vdc, P out = 1.0 W, f = 400 MHz)
Symbol
vCER(sus)
vCEO(sus)
v (BR)EBO
'CEO
'CEX
'EBO
Min
55
30
3.5
-
"FE
v CE(sat)
5.0
10
25
fT
C bo
G pe
V
500
800
10
45
Max
0.02
5.0
0.1
0.1
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
200
200
1.0 Vdc
MHz
-
3.0 PF
dB
%
7-9

2N3866
2N3866 2N3866A
ZL >"0
FIGURE 1 - 400 MHz TEST CIRCUIT SCHEMATIC
W! N Outputs
CI: 3.0 35 pF
C2.C5: 8.0 60 pF
C3: 12 pF
C4: 1000 pF
C6: 0.9-7.0 pF
L1: Two turns #18 Wire,
1/4" ID, 1/8" long
L2: FERRITE BF Choke,
One Turn, z = 450 Oh
L3.L4: RF Choke, 0.1 mH
1.5: 2-3/4 Turns, #18 Wire
1/4" ID, 3/16" long
R1: 5.6 Ohms
*<
FIGURE 2 POWER OUTPUT versus
FREQUENCY (Class C)
VCE 28 V
FIGURE 3 CURRENT-GAIN - BANDWIDTH PRODUCT
~ 1000
;
1 30 mW
^^ 50 TlW\
25 mW
^
Pin ' 2 DO mil
200 300
f, FREQUENCY (MHz)
400 500 600
FIGURE 4 - COLLECTOR BASE TIME CONSTANT
_ 10
1 B.O
o
I 6.0
<
ooc 4.0
__--- "
g 2.0
P
VcE = 15 Vdc
f = 31.8 MHz
1
IC, COLLECTOR CURRENT (mA)
VCE 15 Vdc
20 40 60 80 100 120 140 160
IC, COLLECTOR CURRENT (mA)
FIGURE 5 - OUTPUT CAPACITANCE
5.0 10 15 20 25 30 35
Vcb, COLLECTOR BASE VOLTAGE (VOLTS)
40
7-10


Features 2N3866 2N3866A MAXIMUM RATINGS Rating C ollector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collec tor Current Continuous Total Device Dis sipation Ca Jq = 25°C Derate above 25 C Storage Temperature Symbol VCEO VCB O VEBO 'c PD T stg Value 30 55 3.5 0.4 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C JAN, JTX, JTXV A VAILABLE CASE 79-02, STYLE 1 TO-39 (TO- 205AD) HIGH FREQUENCY TRANSISTOR NPN SI LICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted. OFF CHA RACTERISTICS Characteristic Collector -Emitter Breakdown Voltage dC = 5.0 mAd c, Rbe = 10 n) Collector-Emitter Sustai ning Voltage dC = 5.0 mAdc, Bl = 0) Emi tter-Base Breakdown Voltage (IE = 100 M Adc, lc = 0) Collector Cutoff Current ( VC E = 28 Vdc, Bl = 0) Collector Cutoff Current (Vce = 30 Vdc, Vbe = -1.5 Vdc (Rev.), Jq = 200°C) (Vce = 55 Vdc, V B e = -1.5 Vdc (Rev.) Emitter Cutoff Cur rent (V B e = 3.5 Vdc, lc = 0) ON CHARA CTERISTICS DC Current Gain dC = 360 mAdc, Vce = 5.0 Vdc) dC = .
Keywords 2N3866, datasheet, pdf, Motorola, HIGH, FREQUENCY, TRANSISTOR, N3866, 3866, 866, 2N386, 2N38, 2N3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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