2N5032 TRANSISTOR Datasheet

2N5032 Datasheet, PDF, Equivalent


Part Number

2N5032

Description

HIGH FREQUENCY TRANSISTOR

Manufacture

Motorola

Total Page 3 Pages
Datasheet
Download 2N5032 Datasheet


2N5032
2N5031
2N5032
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation AT(a< = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
•c
PD
TJ< Tstg
Value
10
15
3.0
20
200
1.14
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 0.01 mAdc, El = 0)
Emitter-Base Breakdown Voltage
E(l = 0.01 mAdc, lc = 0)
Collector Cutoff Current
(Vcb = 6.0 Vdc, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 1.0 mAdc, Vqe = 6.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vce = 6.0 Vdc, El = 0, f = 0.1 MHz)
Collector Base Time Constant
dC = 6.0 mAdc, Vce = 6.0 Vdc, f = 31.8 MHz)
Noise Figure (Figure 1)
dC = 1.0 mAdc, Vce = 6.0 Vdc, f = 450 MHz)
2N5031
2N5032
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(Vce = 6.0 Vdc, lc = 1-0 mAdc, f = 450 MHz)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
10
15
3.0
hFE 25
fT
Ccb
rb'C c
NF
1000
-
Typ
1.0
1.3
5.0
~
UMax
Vdc
Vdc
Vdc
10 nAdc
300
3500
1.5
2.5
3.0
25
MHz
pF
ps
dB
7-28

2N5032
2N5031 2N5032
FIGURE 1 - POWER GAIN AND NOISE FIGURE TEST CIRCUIT
SHIELD (GROUNDED)
FIGURE 2 - COLLECTOR-BASE CAPACITANCE versus VOLTAGE
C1.C2.C4.C7
C8
C3.C5
08 lOpF
0.5 3 5pF
500 pF
- 1.0 k
1/4 wan 5%
1/4" Brass Rod. Solder Plated, 11/8'
mPlaced 5/6" from the socket and p
ungrounded side of CI
W2 Turn 116. SMS" abowUind'
FIGURE 3 - CURRENT-GAIN-BANDWIDTH PRODUCT
1s
1.0
n
2.0 4.0
6.0 8.0
10
12
14
16
Vcb, COLLECTOR BASE VOLTAGE (VOLTS)
FIGURE 4 - Sii AND S22
VCE = 6.0 Vdc
0.6
2.0
IC, COLLECTOR CURRENT (mAdc)
FIGURE 5 -S 12
7-29


Features 2N5031 2N5032 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR N PN SILICON MAXIMUM RATINGS Rating Coll ector-Emitter Voltage Collector-Base Vo ltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissip ation AT(a< = 25°C Derate above 25°C Operating and Storage Junction Temperat ure Range Symbol VCEO VCBO VEBO •c P D TJ< Tstg Value 10 15 3.0 20 200 1.14 - 65 to + 200 Unit Vdc Vdc Vdc mAdc m W mW/°C °C ELECTRICAL CHARACTERISTIC S (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS C ollector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Ib = 0) Collector-Base Brea kdown Voltage (IC = 0.01 mAdc, El = 0) Emitter-Base Breakdown Voltage E(l = 0. 01 mAdc, lc = 0) Collector Cutoff Curre nt (Vcb = 6.0 Vdc, Ie = 0) ON CHARACTER ISTICS DC Current Gain dC = 1.0 mAdc, Vqe = 6.0 Vdc) SMALL SIGNAL CHARACTERIS TICS —Current-Gain Bandwidth Product dC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 M Hz) Collector-Base Capacitance (Vce = 6.0 Vdc, El = 0, f = 0.1 .
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