2N5032

2N5031 2N5032 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation AT(a< = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO c PD TJ< Tstg Value 10 15 3.0 20 200 1.14 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 0.01 mAdc, El = 0) Emitter-Base Breakdown Voltage E(l = 0.01 mAdc, lc = 0) Collector Cutoff Current (Vcb = 6.0 Vdc, Ie = 0) ON CHARACTERISTICS DC Current Gain dC = 1.0 mAdc, Vqe = 6.0 Vdc) SMALL SIGNAL CHARACTERISTICS —Current-Gain Bandwidth Product dC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) Collector-Base Capacitance (Vce = 6.0 Vdc, El = 0, f = 0.1 ...