2N5943
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current ...
2N5943
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C Total Device Dissipation (w Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol v CEO v CBO v EBO
"C
PD
Pd
TJ' Tstg
Value 30 40 3.5 400
1.0 5.7 3.5 0.02
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watt mW/°C Watts mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Irj = 5.0 mAdc, lg = 0)
Co I lector- Base Breakdown Voltage (Irj = 100 /uAdc, lg = 0)
Emitter-Base Breakdown Voltage Oe = 100 /*Adc, lc = 0) Collector Cutoff Current (Vqe = 20 Vdc, Ib = 0)
Collector Cutoff Current (Vcb = 15 Vdc, lg = 0)
ON CHARACTERISTICS
DC Current Gain (Iq = 50 mAdc, Vqe = 15 Vdc)
Collector-Emitter Saturation Voltage 0c = 10...
