2N5943 TRANSISTOR Datasheet

2N5943 Datasheet, PDF, Equivalent


Part Number

2N5943

Description

HIGH FREQUENCY TRANSISTOR

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download 2N5943 Datasheet


2N5943
2N5943
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
Total Device Dissipation (w Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
v CBO
v EBO
"C
PD
Pd
TJ' Tstg
Value
30
40
3.5
400
1.0
5.7
3.5
0.02
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Irj = 5.0 mAdc, lg = 0)
Co I lector- Base Breakdown Voltage (Irj = 100 /uAdc, lg = 0)
Emitter-Base Breakdown Voltage Oe = 100 /*Adc, lc = 0)
Collector Cutoff Current (Vqe = 20 Vdc, Ib = 0)
Collector Cutoff Current (Vcb = 15 Vdc, lg = 0)
ON CHARACTERISTICS
DC Current Gain (Iq = 50 mAdc, Vqe = 15 Vdc)
Collector-Emitter Saturation Voltage 0c = 100 mAdc, lg = 10 mAdc)
=Base-Emitter- Saturation Voltage (lc 100 mAdc, lg = 10 mAdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 25 mAdc, Vce = 15 Vdc, f = 200 MHz)
dC = 50 mAdc, Vce = 15 Vdc, f = 200 MHz)
dC = 100 mAdc, Vce = 15 Vdc, f = 200 MHz)
Collector-Base Capacitance
(Vcb = 30 Vdc, El = 0, f = 100 kHz)
Emitter-Base Capacitance
(V EB = 0.5 Vdc, cl = 0, f = 100 kHz)
Small Signal Current Gain
dC = 50 mAdc, Vce = 1 5 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 50 mAdc, Vcb = 15 Vdc, f = 31.8 MHz)
Noise Figure
dC = 30 mAdc, Vce = 15 Vdc, f = 200 MHz) (Figure 1)
dC = 35 mAdc, Vce = 15 Vdc, f = 200 MHz) (Figure 6)
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
dC = 10 mAdc, Vce = 15 Vdc, f = 200 MHz) (Figure 1)
dC = 50 mAdc, VCE = 15 Vdc, f = 250 MHz) (Figure 6)
Intermodulation Distortion
dC = 50 mAdc, VC£ = 15 Vdc, Vout = +50 dBmV)
Cross Modulation Distortion
dC = 50 mAdc, Vce = 1 5 Vdc, V out = +40 dBmV)
dC = 50 mAdc, VCE = 15 Vdc, Vout = +50 dBmV)
Symbol
V{BR)CEO
v (BR)CBO
v (BR)EBO
!CEO
'CBO
hFE
v CE(sat)
v BE(sat)
h
Ccb
Ceb
hfe
rb'C c
NF
Min
30
40
3.5
--
25
-
Typ
0.15
0.88
1000
1200
1000
1.0
25
2.0
-
1350
1550
1425
1.6
8.4
5.5
3.4
6.8
G pe
IM
11.4
7.0 7.6
XM
- -67
-45
Max
50
10
300
0.2
1.0
2400
2.5
15
350
20
8.0
-
-50
-42
Unit
Vdc
Vdc
Vdc
^Adc
fiAdc
Vdc
Vdc
MHz
pF
pF
-
ps
dB
dB
dB
dB
7-55

2N5943
2N5943
FIGURE 1 - NARROWBAND TEST CIRCUIT
Q)
i
j
—J— i n.iR "
7k £0.47 ?k 0001 mf
1 11 10
f" H
"~~TJ±C0.1 M F ^D.OOImF
?-^rrL2
<
-
C
i
rr±.^ f 0.47^ 0.001 pF
I1
LI = 2 turns #20 wire
1/4" ID, 3/16" long
L2= 5 turns #18 wire
1/4" ID, 5/8" long,
tapped 1-3/4 turns
Irum collector
All capacitors in pF
unless otherwise noted.
FIGURE 2 - CURRENT-GAIN - BANDWIDTH PRODUCT
VCE = 15Vdc
FIGURE 3 - COLLECTOR-BASE TIME CONSTANT
VCE = 15 Vdc
20 40
60 80 100 120 140 160
IC, COLLECTOR CURRENT (mAdc)
20 40 60 80 100 120 140 160
IC, COLLECTOR CURRENT (mAdc)
FIGURE 4 - SATURATION VOLTAGES
5.0
3.0
2.0
'
I
I
I
!
I
j
J 10
.
>
a 0.5
=VBE( 3t)
I
>
0.2
vc
0.1
0.05
20 30
60 70 100
200 300 ' 500
IC, COLLECTOR CURRENT (mAdc)
FIGURE 5 - CAPACITANCES versus REVERSE VOLTAGE
10
z
<
G 10
<
20
k Ceb
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
40
Vr, REVERSE VOLTAGE (VOLTS)
7-56


Features 2N5943 MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Curr ent Continuous @Total Device Dissipatio n TA = 25°C Derate above 25°C Total D evice Dissipation (w Tq = 25°C Derate above 25°C Operating and Storage Junct ion Temperature Range Symbol v CEO v C BO v EBO "C PD Pd TJ' Tstg Value 30 40 3.5 400 1.0 5.7 3.5 0.02 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NP N SILICON ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise noted.) Cha racteristic OFF CHARACTERISTICS Collect or-Emitter Breakdown Voltage (Irj = 5.0 mAdc, lg = 0) Co I lector- Base Breakd own Voltage (Irj = 100 /uAdc, lg = 0) E mitter-Base Breakdown Voltage Oe = 100 /*Adc, lc = 0) Collector Cutoff Current (Vqe = 20 Vdc, Ib = 0) Collector Cutof f Current (Vcb = 15 Vdc, lg = 0) ON CHA RACTERISTICS DC Current Gain (Iq = 50 m Adc, Vqe = 15 Vdc) Collector-Emitter Saturation Voltage 0c = 10.
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