2N5947 TRANSISTOR Datasheet

2N5947 Datasheet, PDF, Equivalent


Part Number

2N5947

Description

HIGH FREQUENCY TRANSISTOR

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download 2N5947 Datasheet


2N5947
2N5947
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
v EBO
ic
PD
Tstg
Value
30
40
3.5
400
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
CASE 244A-01, STYLE 1
TO-117 (TO-232AA)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (Ic = 100 /uAdc, lg = 0)
Emitter-Base Breakdown Voltage (lg .= 100 /*Adc, cl = 0)
Collector Cutoff Current (Vce = 28 Vdc, Ib = 0)
Collector Cutoff Current (Vcb - 20 Vdc, Ie = 0)
Emitter Cutoff Current 1Vbe = 3.5 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (Ic = 75 mAdc, Vce = 20 Vdc)
Collector-Emitter Saturation Voltage (Ic = 200 mAdc, Ib = 20 mAdc)
Base-Emitter Saturation Voltage (Ic = 200 mAdc, Ib = 20 mAdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(IC = 75 mAdc, Vce = 20 Vdc, f = 200 MHz)
Collector-Base Capacitance
(VC b = 30 Vdc, El = 0, f = 100 kHz)
Emitter-Base Capacitance
(Veb = 0.5 Vdc, Cl = .0, f = 100 kHz)
Small Signal Current Gain
(lC = 75 mAdc, Vce = 20 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 75 mAdc, Vcb = 20 Vdc, f = 31.8 MHz)
Noise Figure
(lC = 50 mAdc, Vce = 20 Vdc, f = 200 MHz)
(lC = 50 mAdc, Vce = 20 Vdc, f = 200 MHz)(1)
C(l = 75 mAdc, Vce = 20 Vdc, f = 200 MHz)(1)
FUNCTIONAL TEST
(Figure 1)
(Figure 2)
(Figure 2)
Common-Emitter Amplifier Power Gain (Figure 2)
(lC = 75 mAdc, VCE = 20 Vdc, f = 250 MHz)
Intermodulation Distortion (Figure 2)
(lC = 75 mAdc, Vcfe = 20 Vdc, Vout = +50 dBmV)
Cross Modulation Distortion (Figure 2)
(lC = 75 mAdc, VCe = 20 Vdc, Vout = +50 dBmV)
(1) Includes noise figure of post-amplifier and matching pad
Symbol
Min
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CEO
!CBO
'EBO
30
40
3.5
hFE
v CE(sat)
v BE(sat)
25
*T
Ccb
Ceb
h fe
rb'Cc
NF
1100
25
2.0
-
G pe
10
IM
XM
Typ
_
_
0.2
1.0
1500
1.5
8.2
-
-
3.8
7.2
7.8
11
-55
-60
Unit
Vdc
Vdc
Vdc
100 ,uAdc
10 /iAdc
100 /uAdc
250
0.35
1.5
-
Vdc
Vdc
- MHz
4.0 pF
12 pF
-300
20 ps
dB
8.5
- dB
-50 dB
-57 dB
7-61

2N5947
2N5947
FIGURE 1 - NARROWBAND TEST CIRCUIT
^13
VCC«
1
C12^;
rri*—^AJ^AJ *-
L5
Tl
"I
J rf V~-Y2N5947
i Tj—P
C6
R2
H^l.
C2, C3
10 20 pF
. C8, C9
C10.C11
.C13
2
470 pF
0001 uF
0.01 uF
3 Turns AWG #18
5/16" Long
R1.R2
AWG1/2 Turns
#18, l/<
3 3/4 Turns AWG #18,3/16" ID,
lOOhi
FIGURE 3 - CURRENT-GAIN-BANDWIDTH PRODUCT
VCE = 20Vdc
FIGURE 2 - BROADBAND TEST CIRCUIT
R4
-V*»—
? Hi!
(OUTPUT
CI. £2
0.5 -6.0 pF
C3. C7
1500 pF Underwood
C4.C5.C8 0.01 B F
C6 470 pF
LI 3 Turns #20 AWG. 5/32" ID
L2 0.84 u H,OhmiIeZ235
Rl 20
L3 5Turns#26AWG.5/32"l
FIGURE 4 - CAPACITANCES
Ce
20 40 60 80 100 120 140 160
IC, COLLECTOR CURRENT (mAdc)
FIGURE 5 - COLLECTOR EMITTER SATURATION VOLTAGE
I
- 1.0
^'
0-7
C cb
1.1 0.2 0.3 0.5 0.7 1.0. 2.0 3.0 5.0 7.0 10
Vr, REVERSE VOLTAGE (VOLTS)
20 30 40
FIGURE 6 - BASE EMITTER SATURATION VOLTAGE
/lB =
~ 0.1
m o.07
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mAdc)
500
> 0.07
0.04
5.0 7.0
10
20 30
50 70 100
TC, COLLECTOR CURRENT (mAdc)
200 300
500
7-62


Features 2N5947 MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Curr ent Continuous @Total Device Dissipatio n Tc = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO v EBO ic PD Tstg Value 30 40 3.5 400 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt s mW/°C °C CASE 244A-01, STYLE 1 TO- 117 (TO-232AA) HIGH FREQUENCY TRANSISTO R NPN SILICON ELECTRICAL CHARACTERISTI CS (Ta = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, Ib = 0) Collector-Base Brea kdown Voltage (Ic = 100 /uAdc, lg = 0) Emitter-Base Breakdown Voltage (lg .= 1 00 /*Adc, cl = 0) Collector Cutoff Curr ent (Vce = 28 Vdc, Ib = 0) Collector Cu toff Current (Vcb - 20 Vdc, Ie = 0) Emi tter Cutoff Current 1Vbe = 3.5 Vdc, Ic = 0) ON CHARACTERISTICS DC Current Gai n (Ic = 75 mAdc, Vce = 20 Vdc) Collecto r-Emitter Saturation Voltage (Ic = 200 mAdc, Ib = 20 mAdc) Base-Emitter Saturation Voltage (Ic = 200 m.
Keywords 2N5947, datasheet, pdf, Motorola, HIGH, FREQUENCY, TRANSISTOR, N5947, 5947, 947, 2N594, 2N59, 2N5, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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