MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Rbe = 330fi) Collector-Base Voltage Emitter-Base Voltage
—Collector Cu...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Rbe = 330fi) Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"c = 50°C Derate above 50°C
Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol VCER vCBO v EBO
"C
PD
Tj T stg
Value 25 35 3.5 150 2.5 20.0
+ 175 - 65 to + 200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C °C
Symbol R &JC
Max
50
Unit °C/W
MRF517
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY
TRANSISTOR
NPN SILICON
f
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage flC = 5.0 mAdc, \q = 0)
Collector-Emitter Breakdown Voltage OC = 5.0 mAdc, Rbe = 330 Ohms)
Collector-Base Breakdown Voltage dC = 100 /tAdc, Ig = 0)
Emitter-Base Breakdown Voltage (IE = 100 AtAdc, lc = 0)
Collector Cutoff Current
(Vqe = 15 Vdc, Bl = 0)
ON CHARACTERISTICS
DC Current Gain flC = 60 m...