MMBT6427

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO VEBO 'C THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, T"a = 25°C Derate above 25°C PD Storage Temperature Tstg Thermal Resistance Junction to Ambient RflUA Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 40 40 12 500 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C °C/W MMBT6427 CASE 318-02/03, STYLE 6 SOT-23 (TOr236AA/AB) DARLINGTON TRANSISTOR NPN SILICON Refer to 2N6426 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 100 MAdc, Ie = 0) Emitter-Base Breakdown Voltage dC = 10 ^Adc, lc = 0) Collector Cutoff Current (Vqe = 25 Vdc, Ib = 0) Collector Cutoff Current (Vcb = 30 Vdc, Ie = 0) Emitter Cutoff Current (VgE = 10Vdc,...