T
P2N5550 P2N5551
CASE 29-02, STYLE 17 TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to 2N5550 for graphs.
...
T
P2N5550 P2N5551
CASE 29-02, STYLE 17 TO-92 (TO-226AA)
AMPLIFIER
TRANSISTORS
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating
Symbol 2N 2N 5550 5551
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
Total Device Dissipation T/\ = 25°C Derate above 25°C
Total Device Dissipation Tc = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
VCEO VCBO VEBO
ic
PD
pd
Tj, st g
140 160 160 180
6.0
600 625
5.0
1.5 12
-55 to +150
Vdc
Vdc
Vdc mAdc
mW
mW/°C
Watts
mW/°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rfjjc
83.3
°C/W
Thermal Resistance, Junction to Ambient RfjJA
200
°c/w
(1) RftJA is mesured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
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